Download PDFOpen PDF in browser1KW Amplifier Class D Design with GaN SwitchesEasyChair Preprint 46466 pages•Date: November 25, 2020AbstractWith recent advances in Gallium Nitride (GaN) semiconductor technology, it is possible to achieve greater applications in the power electronics market, allowing high switching speeds and high power conversion densities by transistors. This work presents application of GaN transistors in the development of class D audio amplifier of 1KWrms in order to observe efficiency and losses generated in the switches, using complete bridge topology with unipolar modulation and proportional control integrative derivative (PID) digital. It obtains 97% yield on the amplifier and Total Harmonic Distortion (THD) of 0.23% through GaN transistor simulations and circuit simulation, in the prototype 97.7% of yield at maximum power are obtained. Keyphrases: Class D Amplifier, GaN FET, GaN Transistor Losses, hardware simulation
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